The US, China and Japan are working on research and development in gallium oxide crystal growth and productionizing gallium oxide chips. The Gallium oxide chips can have a voltage resistance value 3 ...

Resistive random-access memory (RRAM) is a highly attractive form of RAM, as it promises low-power usage with stable long-term storage, even in the absence of external power. Finding the right ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the ...

Successful development of high-performance amorphous P-type oxide semiconductor using tellurium-selenium composite oxide. Professor Yong-Young Noh from the Department of Chemical Engineering at Pohang ...

(Nanowerk News) Daegu Gyeongbuk Institute of Science and Technology (DGIST) revealed a breakthrough by Professor Hyuk-jun Kwon's team from the Department of Electronic Engineering and Computer Science ...

Scientists at the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia have created electronic devices that continue to function perfectly in both extreme cold and extreme heat.

Gallium oxide (Ga₂O₃) is a semiconductor material that could make electronic devices much more energy-efficient than current silicon-based technology. Electronic diodes require two types of ...

Electronics and Telecommunications Research Institute (ETRI) of Korea and its research team have successfully developed core material and device process technologies of gallium oxide (Ga2O3) power ...

Researchers from Beijing University have discovered a new kind of gallium oxide (Ga₂O₃) that could be used to power the next generation of semiconductors. If the research proves fruitful, it could be ...

Researchers from Seoul National University and KAIST published “Oxide Semiconductor Gain Cell-Embedded Memory: Materials and Integration Strategies for Next Generation On-Chip Memory”. “The data ...