Semiconductor Engineering

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Ars Technica

Transistor with a 1nm gate size is the world’s smallest

Conventional silicon-based electronics are rapidly approaching a fundamental barrier. Below about five nanometers, quantum effects make their behavior unpredictable. That’s led to research into ...
Electronics Weekly

Double-gate transistor model created

With double-gate transistors becoming a serious candidate for the 45nm technology node, Freescale Semiconductor and the University of Florida have created what they claim is the first double-gate ...